罗姆的功率器件支持英伟达全新800V高压直流架构

Power semiconductor technology firm ROHM says that it is one of the key silicon providers supporting NVIDIA’s new 800V High-Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data-center design, enabling megawatt-scale AI factories that are more efficient, scalable, and sustainable.功率半导体技术公司罗姆（ROHM）表示，其是支持英伟达新型800V高压直流（HVDC）架构的关键硅片供应商之一。这标志着数据中心设计的一个关键转变，使兆瓦级人工智能工厂变得更高效、更具扩展性且更可持续。

ROHM says that its power device portfolio spans both silicon and wide-bandgap technologies, including silicon carbide (SiC) and gallium nitride (GaN), offering a strategic path for data-center designers. Its silicon MOSFETs are already widely adopted across automotive and industrial sectors, providing a cost-effective and reliable solution for power conversion needs. These are suitable for applications where price, efficiency and reliability must be balanced, making them a fit for transitional stages of AI infrastructure development.罗姆表示，其功率器件产品组合涵盖硅和宽带隙技术，包括碳化硅（SiC）和氮化镓（GaN），为数据中心设计师提供了一条战略路径。其硅基MOSFET已在汽车和工业领域广泛应用，为功率转换需求提供了经济高效且可靠的解决方案。这些产品适用于需要平衡价格、效率和可靠性的应用场景，因此也适合人工智能基础设施发展的过渡阶段。

An example is the RY7P250BM, a 100V power MOSFET endorsed by major global cloud providers designed specifically for hot-swap circuits in 48V power systems — an essential component in AI servers. Key features include what is claimed to be best-in-class SOA (safe operating area) performance and ultra-low ON-resistance (1.86mΩ) in a compact 8080 package. These characteristics help to reduce power loss and improve system reliability — crucial requirements in high-density, high-availability cloud platforms. As data centers transition from 12V to 48V and beyond, hot-swap capability becomes critical for maintaining uptime and protecting against inrush currents.例如 RY7P250BM，这是一款100V功率MOSFET，得到全球主要云服务提供商的认可，专为48V电源系统中的热插拔电路而设计，是人工智能服务器中的关键组件。其主要特性包括号称同类最佳的SOA（安全工作区）性能，以及采用紧凑的8080封装时具备的超低导通电阻（1.86毫欧）。这些特性有助于降低功率损耗并提高系统可靠性，这是高密度、高可用性云平台的关键要求。随着数据中心从12V向48V及更高电压过渡，热插拔能力对于保持正常运行时间和防止浪涌电流至关重要。

Industrial-grade rectification with minimal losses is an area where ROHM’s SiC devices align with NVIDIA’s plans to begin large-scale deployment of its 800V HVDC data-center architecture to power 1MW compute racks and beyond. At the heart of NVIDIA’s new infrastructure is the conversion of 13.8kV AC from the grid directly into 800V DC. The initiative is designed to address the inefficiencies of traditional 54V rack power systems, which are constrained by physical space, copper overload, and conversion losses.工业级低损耗整流是罗姆的碳化硅（SiC）器件与英伟达计划相契合的一个领域。英伟达计划开始大规模部署其800V高压直流（HVDC）数据中心架构，为1MW及以上的计算机架供电。英伟达新基础设施的核心是将电网输入的13.8kV交流电直接转换为800V直流电。该举措旨在解决传统54V机架电源系统效率低下的问题，这些问题主要由物理空间限制、铜过载和转换损耗等因素导致。

ROHM’s SiC MOSFETs deliver what is claimed to be superior performance in high-voltage, high-power environments, offering higher efficiency through reduced switching and conduction losses, greater thermal stability for compact, high-density systems, and proven reliability in mission-critical applications. These characteristics align with the requirements of the NVIDIA 800V HVDC architecture, which aims to reduce copper usage, minimize energy losses, and simplify power conversion across the data center.罗姆的碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）据称在高电压、高功率环境中具有卓越性能，通过降低开关损耗和导通损耗提高效率，为紧凑、高密度系统提供更高的热稳定性，并在关键任务应用中具备可靠的性能。这些特性与英伟达800V高压直流（HVDC）架构的要求相符，该架构旨在减少铜的使用量、将能量损耗降至最低，并简化数据中心的功率转换。

Complementing SiC, ROHM is advancing gallium nitride technologies under its EcoGaN brand. While SiC is best-suited for high-voltage, high-current applications, GaN offers exceptional performance in the 100V to 650V range, with superior breakdown field strength, low ON-resistance, and ultra-fast switching. ROHM’s broad EcoGaNTM lineup includes 150V and 650V GaN HEMTs, gate drivers, and integrated power stage ICs. At the same time, proprietary Nano Pulse Control technology further improves switching performance, reducing pulse widths to as low as 2ns. These innovations support the growing demand for smaller, more efficient power systems in AI data centers.作为碳化硅（SiC）的补充，罗姆（ROHM）正在以其EcoGaN品牌推进氮化镓（GaN）技术。虽然碳化硅最适合用于高电压、大电流应用，但氮化镓在100V至650V范围内具有卓越的性能，具备出色的击穿场强、低导通电阻和超快开关速度。罗姆广泛的EcoGaNTM产品阵容包括150V和650V氮化镓高电子迁移率晶体管（GaN HEMT）、栅极驱动器和集成功率级IC。与此同时，专有的纳米脉冲控制技术进一步提升了开关性能，将脉冲宽度降低至低至2ns。这些创新满足了人工智能数据中心对更小、更高效电源系统不断增长的需求。

Beyond discrete devices, ROHM offers a lineup of high-power SiC modules, including top-side-cooling molded packages such as the HSDIP20, equipped with advanced 4th Gen SiC chips. These 1200V SiC modules are optimized for LLC topologies in AC-DC converters and primary-side applications in DC-DC converters. Engineered for high-efficiency, high-density power conversion, they are particularly well suited for the centralized power systems envisioned in NVIDIA’s architecture. Their robust thermal performance and scalability make them suitable for 800V busways and MW-scale rack configurations.除分立器件外，ROHM还提供一系列高功率碳化硅（SiC）模块，包括采用顶部散热模压封装的HSDIP20等，配备先进的第四代碳化硅芯片。这些1200V碳化硅模块针对AC – DC转换器中的LLC拓扑结构以及DC – DC转换器中的初级侧应用进行了优化。它们专为高效、高密度功率转换而设计，尤其适用于英伟达架构中设想的集中式电源系统。其强大的热性能和可扩展性使其适用于800V母线和兆瓦级机架配置。

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